Development Of Single Event Effects Analysis System At The IMP Microbeam Facility

Single-event-effects(SEEs)in integrated circuits(ICs)caused by galactic single ions are the major cause of anomalies for a spacecraft.The main strategies to decrease radiation failures for spacecraft are using radiation hardening devices and developing new radiation hardened design methods.High energy ion microbeam is one of the powerful tools to obtain spatial information of SEEs in ICs and to guide the radiation hardening design.The microbeam facility in the Institute of Modern Physics(IMP),Chinese Academy of Science(CAS)can meet both the liner energy transfer(LET)and ion range requirements for SEEs simulation studies on ground.In order to study SEEs characteristics of ICs at this microbeam platform,a SEEs analysis system was developed.This system can target and irradiate ICs with single ions in micrometer-scale accuracy,meanwhile it acquires multi-channel SEE signals and maps the SEE sensitive regions online.The performance has been checked with several SEE study experiments and the results shown that this system is valuable to study SEEs.This thesis will give a detailed description on the study of SEE analysis techniques based on the LIHIM microbeam facility.