Research And Design Of Intelligent Power Electronic Module For Electric Vehicle

With the aggravation of energy shortage and environmental pollution,more and more people pay attention to the less harmful electric vehicles.Various countries have also issued relevant policies to support the development of the electric vehicle industry.The electric vehicle industry started relatively late in our country,and there are still many gaps with the leading level of developed countries.Therefore,the development of electric vehicle technology has become an important way to enhance international market competitiveness and international market position of China.In recent years,China has issued a series of support policies,and the electric vehicle industry will have great opportunities for development.Power module is the core device of energy conversion in Electric Vehicle,and its quality will directly affect the performance of electric vehicle.This paper designs an intelligent power electronic module for electric vehicle,which integrates power chip and drive protection circuit into one module.The main research contents are as fo lows:(1)The structure and characteristics of IGBT are introduced.The special requirements of power IGBT module for electric vehicles are analyzed from the aspects of environmental temperature,complex working conditions,packaging technology and economy.(2)IGBT drive and protection circuit is designed.Through research and analysis,the design methods of driving mode,driving power supply,gate resistance and signal isolation are described in detail.Aiming at the requirement of IGBT module for driving power and signal isolation for electric vehicle,the driving circuit is designed with 2ED020I12-F2 chip produced by Infineon Company.At the same time,over-voltage,over-current,over-temperature and grid drive under-voltage protection circuits are designed.PCB board was made for experimental verification.(3)Combining with the domestic semiconductor manufacturing process,the manufacturing process of grooved gate FS-IGBT is designed.The technological parameters of N-drift region,P base region,FS layer,P+collector region and Trench structure are designed and optimized.The cell structure of IGBT designed is verified by simulation.Finally,the IGBT cell structure with 713V voltage withstanding capacity,4.37V threshold voltage and 1.12V conduction voltage drop was obtained.The layout of IGBT module for 600V/800A electric vehicle is designed by parallel connection of several 600V/100AIGBT chips.