The New FinFET Device Single Event Effect Research

As we all know,aerospace technology is a weapon of the country and is developing rapidly,and more and more spacecraft around the world is being sent into space,and there is a large amount of radiation in space,which can cause harm to the internal devices of the spacecraft and may cause the performance of the device is reduced,or even severely,it will cause the overall failure of the electronic system.The ever-shrinking device feature size has brought a more severe test of the spacecraft,in which the single event effect is more serious.At the same time,the introduction to various new structures and new materials has brought more problems to the anti-single event effect.Therefore,this article will focus on the BOI(Body-On-Insulator,BOI)FinFET device and the GOI(Germanium-On-Insulator,GOI)FinFET device.The design of anti-single particle reinforcement of nanoscale devices and integrated circuits provides reference.Through simulation,the main structural parameters and working voltage(Vdd),which affect the single event effect of BOI FinFET devices,are studied.Studies have found that the single event effect will decrease as decreasing the width of the Fin of the device,but will increase as decreasing the length of the gate;therefore,more appropriate structural parameters should be selected to effectively reduce the trouble caused by the single event effect.At the same time,The single event effect Bulk,BOI and SOI(Silicon-On-Insulator,SOI)FinFET also analyzed and compared.It can be found that when their Fin widths are reduced,the changing trends of the single event effects of the three are generally similar,but when the Fin widths change,the single event transient of SOI FinFET devices is similar to the other two devices.Compared with,the impact is relatively small,and BOI FinFET devices are slightly smaller than Bulk FinFET devices in single event transients.When the gate length is reduced,the single event transient of SOI FinFET devices will aggravate as the gate length decreases,while single event transients of Bulk and BOI FinFET devices initially decrease and then increase.When the working voltage is reduced,the peak value of the transient current event three of them will decrease,and the pulse width of the transient current become increase,but the total collected charge remains basically unchanged.At the same time,the single event effect GOI FinFET device was studied and compared with SOI FinFET.The results show that the width of the current pulse,the collected charge and the peak value of the transient current of the GOI FinFET devices decrease with decreasing the width of the Fin.Compared with SOI FinFET devices,the single event effect of GOI FinFET devices changes more significantly when the Fin width changes.When the gate length is reduced,the opposite situation occurs,the single event effect becomes more serious,and when the gate length is small,the amount of charge collected by the GOI FinFET device is much greater than that of the SOI FinFET.The above results indicate that for devices made of germanium(Ge)materials,the design of anti-single particle reinforcement will face greater challenges.